Progress in addressing the simultaneous demands for increasing speed and miniaturization in electrical and computer engineering is to its greatest extent bounded by material stresses under thermal shock. Higher speeds require higher power dissipation, and smaller unit volumes make adequate power dissipation more difficult to achieve. Although there already exists a large body of research concerning endpoint thermal failure in semiconductors, there is little research available on the topic of pre-failure behavior of circuit designs containing semiconductors. Our goal is to subject a circuit containing a semiconductor-based diode to the failure mechanism of thermal shock and test the conductivity of the circuit under drastically changing ambient thermal conditions. We will then use this data to experimentally determine any observable behaviors that qualify as pre-failure symptoms. The resulting observations will be used to determine the efficacy of simulation softwares like LTspice in predicting thermal behavior of a diode circuit under extreme and rapid temperature fluctuations. Our theory is circuit simulation softwares do not account for extreme ambient thermal changes. After completing statistical analysis we will compare the experimental results to simulated results of a duplicate circuit subjected to equivalent temperature parameters and determine if we can reject our theory.